Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories

Fuente: arXiv

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Bibliographic Details
Main Authors:	Belmoubarik, Mohamed, Al-Mahdawi, Muftah, Machado Jr., George, Nozaki, Tomohiro, Coelho, Cláudia, Sahashi, Masashi, Peng, Weng Kung
Format:	Preprint
Published:	2023
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2305.16563