Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices
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arXiv
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| Format: | Preprint |
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2023
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| _version_ | 1866912157051912192 |
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| author | Bicer, Mahmut Balram, Krishna C |
| author_facet | Bicer, Mahmut Balram, Krishna C |
| contents | Guiding and manipulating GHz frequency acoustic waves in $μ$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling high-performance devices is the demonstration of low acoustic dissipation in these highly confined geometries. In this work, we show that gallium nitride (GaN) on silicon carbide (SiC) supports low-loss acoustics by demonstrating acoustic microring resonators with frequency-quality factor ($fQ$) products approaching $4*10^{13}$ Hz at 3.4 GHz. The low dissipation measured exceeds the $fQ$ bound set by the simplified isotropic Akhiezer material damping limit of GaN. We use this low-loss acoustics platform to demonstrate spiral delay lines with on-chip RF delays exceeding 2.5 $μ$s, corresponding to an equivalent electromagnetic delay of $\approx$ 750 m. Given GaN is a well-established semiconductor with high electron mobility, our work opens up the prospect of engineering traveling wave acoustoelectric interactions in $μ$m-scale waveguide geometries, with associated implications for chip-scale RF signal processing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_16961 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices Bicer, Mahmut Balram, Krishna C Applied Physics Optics Guiding and manipulating GHz frequency acoustic waves in $μ$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling high-performance devices is the demonstration of low acoustic dissipation in these highly confined geometries. In this work, we show that gallium nitride (GaN) on silicon carbide (SiC) supports low-loss acoustics by demonstrating acoustic microring resonators with frequency-quality factor ($fQ$) products approaching $4*10^{13}$ Hz at 3.4 GHz. The low dissipation measured exceeds the $fQ$ bound set by the simplified isotropic Akhiezer material damping limit of GaN. We use this low-loss acoustics platform to demonstrate spiral delay lines with on-chip RF delays exceeding 2.5 $μ$s, corresponding to an equivalent electromagnetic delay of $\approx$ 750 m. Given GaN is a well-established semiconductor with high electron mobility, our work opens up the prospect of engineering traveling wave acoustoelectric interactions in $μ$m-scale waveguide geometries, with associated implications for chip-scale RF signal processing. |
| title | Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2305.16961 |