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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2305.19209 |
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| _version_ | 1866913504875773952 |
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| author | Lóio, Hugo Gonçalves, Miguel Ribeiro, Pedro Castro, Eduardo V. |
| author_facet | Lóio, Hugo Gonçalves, Miguel Ribeiro, Pedro Castro, Eduardo V. |
| contents | We have found the first instance of a third-order topological Anderson insulator (TOTAI). This disorder-induced topological phase is gapped and characterized by a quantized octupole moment and topologically protected corner states, as revealed by a detailed numerically exact analysis. We also find that the disorder-induced transition into the TOTAI phase can be analytically captured with remarkable accuracy using the self-consistent Born approximation. For a larger disorder strength, the TOTAI undergoes a transition to a trivial diffusive metal, that in turn becomes an Anderson insulator at even larger disorder. Our findings show that disorder can induce third-order topological phases in 3D, therefore extending the class of known higher-order topological Anderson insulators. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_19209 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Third-order topological insulator induced by disorder Lóio, Hugo Gonçalves, Miguel Ribeiro, Pedro Castro, Eduardo V. Disordered Systems and Neural Networks We have found the first instance of a third-order topological Anderson insulator (TOTAI). This disorder-induced topological phase is gapped and characterized by a quantized octupole moment and topologically protected corner states, as revealed by a detailed numerically exact analysis. We also find that the disorder-induced transition into the TOTAI phase can be analytically captured with remarkable accuracy using the self-consistent Born approximation. For a larger disorder strength, the TOTAI undergoes a transition to a trivial diffusive metal, that in turn becomes an Anderson insulator at even larger disorder. Our findings show that disorder can induce third-order topological phases in 3D, therefore extending the class of known higher-order topological Anderson insulators. |
| title | Third-order topological insulator induced by disorder |
| topic | Disordered Systems and Neural Networks |
| url | https://arxiv.org/abs/2305.19209 |