Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2023
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866911794100961280 |
|---|---|
| author | Shani, Lior Lueb, Pim Menning, Gavin Gupta, Mohit Riggert, Colin Littman, Tyler Hackbarth, Frey Rossi, Marco Jung, Jason Badawy, Ghada Verheijen, Marcel A. Crowell, Paul Bakkers, Erik P. A. M. Pribiag, Vlad S. |
| author_facet | Shani, Lior Lueb, Pim Menning, Gavin Gupta, Mohit Riggert, Colin Littman, Tyler Hackbarth, Frey Rossi, Marco Jung, Jason Badawy, Ghada Verheijen, Marcel A. Crowell, Paul Bakkers, Erik P. A. M. Pribiag, Vlad S. |
| contents | Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2306_00117 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate Shani, Lior Lueb, Pim Menning, Gavin Gupta, Mohit Riggert, Colin Littman, Tyler Hackbarth, Frey Rossi, Marco Jung, Jason Badawy, Ghada Verheijen, Marcel A. Crowell, Paul Bakkers, Erik P. A. M. Pribiag, Vlad S. Mesoscale and Nanoscale Physics Materials Science Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices. |
| title | Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2306.00117 |