Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs
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arXiv
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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866910306717925376 |
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| author | Shen, Yang Cao, Bing-Yang |
| author_facet | Shen, Yang Cao, Bing-Yang |
| contents | We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With microscopic phonon-based electrothermal simulations, we scrutinize both the temperature profiles and electrothermal coupling effect within GaN HEMTs. Two metrics, maximum channel temperature ($T_\text{max}$) and equivalent channel temperature ($T_\text{eq}$), are introduced to measure the reliability and electrical performance degradation of the device, respectively. The influence of bias-dependent heat generation and phonon ballistic transport on the two indicators is thoroughly examined. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2306_08911 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs Shen, Yang Cao, Bing-Yang Applied Physics We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With microscopic phonon-based electrothermal simulations, we scrutinize both the temperature profiles and electrothermal coupling effect within GaN HEMTs. Two metrics, maximum channel temperature ($T_\text{max}$) and equivalent channel temperature ($T_\text{eq}$), are introduced to measure the reliability and electrical performance degradation of the device, respectively. The influence of bias-dependent heat generation and phonon ballistic transport on the two indicators is thoroughly examined. |
| title | Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2306.08911 |