Cover Image

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	John, Philipp, Ruiz, Mikel Gómez, van Deurzen, Len, Lähnemann, Jonas, Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver, Auzelle, Thomas
Format:	Preprint
Published:	2023
Subjects:	Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
by: Ruiz, M Gómez, et al.
Published: (2023)

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
by: Kang, Jingxuan, et al.
Published: (2024)

ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
by: John, Philipp, et al.
Published: (2024)

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
by: Kang, Jingxuan, et al.
Published: (2024)

Polarity-induced selective area epitaxy of GaN nanowires
by: Schiaber, Ziani de Souza, et al.
Published: (2024)

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
by: Fernández-Garrido, Sergio, et al.
Published: (2024)

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
by: Fernández-Garrido, Sergio, et al.
Published: (2024)

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
by: Singhal, Jashan, et al.
Published: (2022)

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
by: Gačević, Ž., et al.
Published: (2024)

Diameter dependence of light absorption in GaAs nanowires evidenced by photoluminescence spectroscopy
by: Marín, Francisca, et al.
Published: (2025)

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
by: Zettler, J. K., et al.
Published: (2024)

Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
by: Kaganer, Vladimir M., et al.
Published: (2025)

Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2025)

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
by: Fernández-Garrido, Sergio, et al.
Published: (2024)

Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
by: Notarangelo, Adriano, et al.
Published: (2026)

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024)

Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
by: Kang, Jingxuan, et al.
Published: (2025)

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
by: Zettler, Johannes K., et al.
Published: (2024)

Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing
by: Zhang, Huaide, et al.
Published: (2025)

Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
by: Chen, Wenshan, et al.
Published: (2024)

Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2024)

Initial molecular beam epitaxial growth of ZnSe on Si substrates
by: V.H. Méndez-García
Published: (1997)

Machine-learning interatomic potential for AlN for epitaxial simulation
by: Taormina, Nicholas, et al.
Published: (2025)

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
by: Buatip, N., et al.
Published: (2024)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
by: Chen, Yu-Hsin, et al.
Published: (2025)

Growth of quantum dots by droplet etching epitaxy in molecular beam epitaxy: theory, practice, and review
by: Gossink, Declan, et al.
Published: (2026)

Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
by: Jarosz, Dawid, et al.
Published: (2024)

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3
by: Ardenghi, A., et al.
Published: (2022)

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
by: Chen, Wenshan, et al.
Published: (2023)

Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
by: J.B. Rojas-Trigos
Published: (2016)

Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy
by: Birkhölzer, Yorick A., et al.
Published: (2026)

Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
by: Gokhale, Vikrant J., et al.
Published: (2025)

Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
by: Ardenghi, A., et al.
Published: (2023)

Optical refractive index measurements of AlGaAs at high temperature for fully automated molecular beam epitaxy growth of Bragg mirrors
by: Gadras, Pierre, et al.
Published: (2025)

Growth of AlN Films by Chemical Vapor Deposition
by: Reynaldo Martínez Guerrero
Published: (1999)

Investigation of the deposition of $α$-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit
by: Jia, Haolin, et al.
Published: (2023)

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects
by: Pshyk, O. V., et al.
Published: (2024)

Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity
by: Papadogianni, Alexandra, et al.
Published: (2021)

Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates
by: Zheng, Yuzhen, et al.
Published: (2023)

Moire based strain analysis in wurtzite GaAs -- rock-salt (Pb,Sn)Te core-shell nanowires grown by molecular beam epitaxy
by: Wojcik, Maciej, et al.
Published: (2026)