Investigation of the deposition of $α$-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866929336632737792 |
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| author | Jia, Haolin Zhou, Boyi Wang, Tao Wu, Yanfu Yang, lina Ding, Zengqian Li, Shuming Xiong, Kanglin Feng, Jiagui |
| author_facet | Jia, Haolin Zhou, Boyi Wang, Tao Wu, Yanfu Yang, lina Ding, Zengqian Li, Shuming Xiong, Kanglin Feng, Jiagui |
| contents | Polycrystalline α-tantalum (110) films deposited on c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these films always occasionally form other structures, such as α-tantalum (111) grains and \b{eta}-tantalum grains. To improve the film quality, we investigate the growth of α-tantalum (110) films on a-plane sapphire substrate under varying conditions by molecular beam epitaxy technology. The optimized α-tantalum (110) film is single crystal, with a smooth surface and atomically flat metal-substrate interface. The film with thickness of 30 nm shows a Tc of 4.12K and a high residual resistance ratio of 9.53. The quarter wavelength coplanar waveguide resonators fabricated with the 150 nm optimized α-tantalum (110) film, exhibits intrinsic quality factor of over one million under single photon excitation at millikelvin temperature. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2306_09566 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Investigation of the deposition of $α$-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit Jia, Haolin Zhou, Boyi Wang, Tao Wu, Yanfu Yang, lina Ding, Zengqian Li, Shuming Xiong, Kanglin Feng, Jiagui Applied Physics Mesoscale and Nanoscale Physics Polycrystalline α-tantalum (110) films deposited on c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these films always occasionally form other structures, such as α-tantalum (111) grains and \b{eta}-tantalum grains. To improve the film quality, we investigate the growth of α-tantalum (110) films on a-plane sapphire substrate under varying conditions by molecular beam epitaxy technology. The optimized α-tantalum (110) film is single crystal, with a smooth surface and atomically flat metal-substrate interface. The film with thickness of 30 nm shows a Tc of 4.12K and a high residual resistance ratio of 9.53. The quarter wavelength coplanar waveguide resonators fabricated with the 150 nm optimized α-tantalum (110) film, exhibits intrinsic quality factor of over one million under single photon excitation at millikelvin temperature. |
| title | Investigation of the deposition of $α$-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2306.09566 |