Dynamic Versus Static Oxidation of Nb/Al-AlOx/Nb Trilayer
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| _version_ | 1866912018354667520 |
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| author | Farrahi, Tannaz Kleinsasser, Alan W. Cyberey, Michael Wang, Jie Eller, Micahel B. Zhang, Jian Z. Kerr, Anthony R. Lambert, Joseph G. Weikle, Robert M. Lichtenberger, Arthur W. |
| author_facet | Farrahi, Tannaz Kleinsasser, Alan W. Cyberey, Michael Wang, Jie Eller, Micahel B. Zhang, Jian Z. Kerr, Anthony R. Lambert, Joseph G. Weikle, Robert M. Lichtenberger, Arthur W. |
| contents | High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical current density (J$_c$) junctions exhibit defects that result in significant subgap leakage current that is detrimental for many applications. High quality, high-J$_c$ junctions can be realized with AlN$_x$ barriers, but control of J$_c$ is more difficult than with AlO$_x$. It is therefore of interest to study the growth of thin AlO$_x$ barriers with the ultimate goal of achieving high quality, high-J$_c$ AlO$_x$ junctions. In this work, 100\%\ O$_2$ and 2\%\ O$_2$ in Ar gas mixtures are used both statically and dynamically to grow AlO$_x$ tunnel barriers over a large range of oxygen exposures. In situ ellipsometry is used for the first time to extensively measure AlO$_x$ tunnel barrier growth in real time, revealing a number of unexpected patterns. Finally, a set of test junction wafers was fabricated that exhibited the well-known dependence of J$_c$ on oxygen exposure (E) in order to further validate the experimental setup. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2306_12684 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Dynamic Versus Static Oxidation of Nb/Al-AlOx/Nb Trilayer Farrahi, Tannaz Kleinsasser, Alan W. Cyberey, Michael Wang, Jie Eller, Micahel B. Zhang, Jian Z. Kerr, Anthony R. Lambert, Joseph G. Weikle, Robert M. Lichtenberger, Arthur W. Superconductivity High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical current density (J$_c$) junctions exhibit defects that result in significant subgap leakage current that is detrimental for many applications. High quality, high-J$_c$ junctions can be realized with AlN$_x$ barriers, but control of J$_c$ is more difficult than with AlO$_x$. It is therefore of interest to study the growth of thin AlO$_x$ barriers with the ultimate goal of achieving high quality, high-J$_c$ AlO$_x$ junctions. In this work, 100\%\ O$_2$ and 2\%\ O$_2$ in Ar gas mixtures are used both statically and dynamically to grow AlO$_x$ tunnel barriers over a large range of oxygen exposures. In situ ellipsometry is used for the first time to extensively measure AlO$_x$ tunnel barrier growth in real time, revealing a number of unexpected patterns. Finally, a set of test junction wafers was fabricated that exhibited the well-known dependence of J$_c$ on oxygen exposure (E) in order to further validate the experimental setup. |
| title | Dynamic Versus Static Oxidation of Nb/Al-AlOx/Nb Trilayer |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2306.12684 |