Stress-induced Artificial neuron spiking in Diffusive memristors

Fuente: arXiv
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Main Authors: Pattnaik, Debi, Sharma, Yash, Saveliev, Sergey, Borisov, Pavel, Akther, Amir, Balanov, Alexander, Ferreira, Pedro
Format: Preprint
Published: 2023
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_version_ 1866929597242671104
author Pattnaik, Debi
Sharma, Yash
Saveliev, Sergey
Borisov, Pavel
Akther, Amir
Balanov, Alexander
Ferreira, Pedro
author_facet Pattnaik, Debi
Sharma, Yash
Saveliev, Sergey
Borisov, Pavel
Akther, Amir
Balanov, Alexander
Ferreira, Pedro
contents Diffusive memristors owing to their ability to produce current spiking when a constant or slowly changing voltage is applied are competitive candidates for the development of artificial electronic neurons. These artificial neurons can be integrated into various prospective autonomous and robotic systems as sensors, e.g. ones implementing object grasping and classification. We report here Ag nanoparticle-based diffusive memristor prepared on a flexible polyethylene terephthalate (PET) substrate in which the electric spiking behaviour was induced by the electric voltage under an additional stimulus of external mechanical impact. By changing the magnitude and frequency of the mechanical impact, we are able to manipulate the spiking response of our artificial neuron. This functionality to control the spiking characterstics paves a pathway for the development of touch-perception sensors that can convert local pressure into electrical spikes for further processing in neural networks. We have proposed a mathematical model which captures the operation principle of the fabricated memristive sensors and qualitatively describes the measured spiking behaviour.
format Preprint
id arxiv_https___arxiv_org_abs_2306_12853
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Stress-induced Artificial neuron spiking in Diffusive memristors
Pattnaik, Debi
Sharma, Yash
Saveliev, Sergey
Borisov, Pavel
Akther, Amir
Balanov, Alexander
Ferreira, Pedro
Applied Physics
Emerging Technologies
Instrumentation and Detectors
Diffusive memristors owing to their ability to produce current spiking when a constant or slowly changing voltage is applied are competitive candidates for the development of artificial electronic neurons. These artificial neurons can be integrated into various prospective autonomous and robotic systems as sensors, e.g. ones implementing object grasping and classification. We report here Ag nanoparticle-based diffusive memristor prepared on a flexible polyethylene terephthalate (PET) substrate in which the electric spiking behaviour was induced by the electric voltage under an additional stimulus of external mechanical impact. By changing the magnitude and frequency of the mechanical impact, we are able to manipulate the spiking response of our artificial neuron. This functionality to control the spiking characterstics paves a pathway for the development of touch-perception sensors that can convert local pressure into electrical spikes for further processing in neural networks. We have proposed a mathematical model which captures the operation principle of the fabricated memristive sensors and qualitatively describes the measured spiking behaviour.
title Stress-induced Artificial neuron spiking in Diffusive memristors
topic Applied Physics
Emerging Technologies
Instrumentation and Detectors
url https://arxiv.org/abs/2306.12853