Lingering Times at Resonance: The Case of Sb-based Tunneling Devices
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| _version_ | 1866929684849098752 |
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| author | Castro, Edgar David Guarin Pfenning, Andreas Hartmann, Fabian Naranjo, Andrea Knebl, Georg Teodoro, Marcio Daldin Marques, Gilmar Eugenio Höfling, Sven Bastard, Gerald Lopez-Richard, Victor |
| author_facet | Castro, Edgar David Guarin Pfenning, Andreas Hartmann, Fabian Naranjo, Andrea Knebl, Georg Teodoro, Marcio Daldin Marques, Gilmar Eugenio Höfling, Sven Bastard, Gerald Lopez-Richard, Victor |
| contents | Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected not only by the filling process in the $Γ$ and L states in Sb-based double-barrier quantum wells but also by the small separation between these states, compared to similar heterostructures based on As. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2307_00597 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Lingering Times at Resonance: The Case of Sb-based Tunneling Devices Castro, Edgar David Guarin Pfenning, Andreas Hartmann, Fabian Naranjo, Andrea Knebl, Georg Teodoro, Marcio Daldin Marques, Gilmar Eugenio Höfling, Sven Bastard, Gerald Lopez-Richard, Victor Mesoscale and Nanoscale Physics Materials Science Quantum Physics 81 Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected not only by the filling process in the $Γ$ and L states in Sb-based double-barrier quantum wells but also by the small separation between these states, compared to similar heterostructures based on As. |
| title | Lingering Times at Resonance: The Case of Sb-based Tunneling Devices |
| topic | Mesoscale and Nanoscale Physics Materials Science Quantum Physics 81 |
| url | https://arxiv.org/abs/2307.00597 |