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Autori principali: Yun, Chao, Guo, Haoran, Lin, Zhongchong, Peng, Licong, Liang, Zhongyu, Meng, Miao, Zhang, Biao, Zhao, Zijing, Wang, Leran, Ma, Yifei, Liu, Yajing, Li, Weiwei, Ning, Shuai, Hou, Yanglong, Yang, Jinbo, Luo, Zhaochu
Natura: Preprint
Pubblicazione: 2023
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Accesso online:https://arxiv.org/abs/2307.01329
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author Yun, Chao
Guo, Haoran
Lin, Zhongchong
Peng, Licong
Liang, Zhongyu
Meng, Miao
Zhang, Biao
Zhao, Zijing
Wang, Leran
Ma, Yifei
Liu, Yajing
Li, Weiwei
Ning, Shuai
Hou, Yanglong
Yang, Jinbo
Luo, Zhaochu
author_facet Yun, Chao
Guo, Haoran
Lin, Zhongchong
Peng, Licong
Liang, Zhongyu
Meng, Miao
Zhang, Biao
Zhao, Zijing
Wang, Leran
Ma, Yifei
Liu, Yajing
Li, Weiwei
Ning, Shuai
Hou, Yanglong
Yang, Jinbo
Luo, Zhaochu
contents The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe3GaTe2 flakes that possess room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven non-reciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe3GaTe2/Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory and neuromorphic computing devices.
format Preprint
id arxiv_https___arxiv_org_abs_2307_01329
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
Yun, Chao
Guo, Haoran
Lin, Zhongchong
Peng, Licong
Liang, Zhongyu
Meng, Miao
Zhang, Biao
Zhao, Zijing
Wang, Leran
Ma, Yifei
Liu, Yajing
Li, Weiwei
Ning, Shuai
Hou, Yanglong
Yang, Jinbo
Luo, Zhaochu
Materials Science
Mesoscale and Nanoscale Physics
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe3GaTe2 flakes that possess room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven non-reciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe3GaTe2/Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory and neuromorphic computing devices.
title Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2307.01329