High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband

Fuente: arXiv
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Hauptverfasser: Wang, Jiawei, Sia, Jia Xu Brian, Li, Xiang, Guo, Xin, Wang, Wanjun, Qiao, Zhongliang, Liu, Callum G. Littlejohns. Chongyang, Reed, Graham T., Rusli, Wang, Hong
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Veröffentlicht: 2023
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author Wang, Jiawei
Sia, Jia Xu Brian
Li, Xiang
Guo, Xin
Wang, Wanjun
Qiao, Zhongliang
Liu, Callum G. Littlejohns. Chongyang
Reed, Graham T.
Rusli
Wang, Hong
author_facet Wang, Jiawei
Sia, Jia Xu Brian
Li, Xiang
Guo, Xin
Wang, Wanjun
Qiao, Zhongliang
Liu, Callum G. Littlejohns. Chongyang
Reed, Graham T.
Rusli
Wang, Hong
contents The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-$μ$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-$μ$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.
format Preprint
id arxiv_https___arxiv_org_abs_2307_02861
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband
Wang, Jiawei
Sia, Jia Xu Brian
Li, Xiang
Guo, Xin
Wang, Wanjun
Qiao, Zhongliang
Liu, Callum G. Littlejohns. Chongyang
Reed, Graham T.
Rusli
Wang, Hong
Optics
Applied Physics
The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-$μ$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-$μ$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.
title High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband
topic Optics
Applied Physics
url https://arxiv.org/abs/2307.02861