Saved in:
Bibliographic Details
Main Authors: Liu, Bei-Lei, Wang, Yue-Chao, Liu, Yu, Liu, Hai-Feng, Song, Hai-Feng
Format: Preprint
Published: 2023
Subjects:
Online Access:https://arxiv.org/abs/2307.07745
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866917569927053312
author Liu, Bei-Lei
Wang, Yue-Chao
Liu, Yu
Liu, Hai-Feng
Song, Hai-Feng
author_facet Liu, Bei-Lei
Wang, Yue-Chao
Liu, Yu
Liu, Hai-Feng
Song, Hai-Feng
contents Strongly correlated systems containing d/f-electrons present a challenge to conventional density functional theory (DFT), such as the widely used local density approximation (LDA) or generalized gradient approximation (GGA). In this work, we developed a doubly screened Coulomb correction (DSCC) approach to perform on-site Coulomb interaction correction for strongly correlated materials. The on-site Coulomb interaction between localized d/f-electrons is determined from a model dielectric function that includes both the static dielectric and the Thomas-Fermi screening. All parameters of the dielectric model are efficiently obtained from self-consistent calculations. We applied DSCC to simulate the electronic and magnetic properties of typical 3d, 4f and 5f strongly correlated systems. The results show that the accuracy of DSCC is comparable to hybrid functionals, but an order of magnitude faster. In addition, DSCC can reflect the difference in the Coulomb interaction of the same element between metallic and insulating situations, similar to the popular but computationally expensive constrained random phase approximation (cRPA) approach. This feature suggests that DSCC is also a promising method for simulating Coulomb interaction parameters.
format Preprint
id arxiv_https___arxiv_org_abs_2307_07745
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Doubly screened Coulomb correction approach for strongly correlated systems
Liu, Bei-Lei
Wang, Yue-Chao
Liu, Yu
Liu, Hai-Feng
Song, Hai-Feng
Strongly Correlated Electrons
Materials Science
Chemical Physics
Strongly correlated systems containing d/f-electrons present a challenge to conventional density functional theory (DFT), such as the widely used local density approximation (LDA) or generalized gradient approximation (GGA). In this work, we developed a doubly screened Coulomb correction (DSCC) approach to perform on-site Coulomb interaction correction for strongly correlated materials. The on-site Coulomb interaction between localized d/f-electrons is determined from a model dielectric function that includes both the static dielectric and the Thomas-Fermi screening. All parameters of the dielectric model are efficiently obtained from self-consistent calculations. We applied DSCC to simulate the electronic and magnetic properties of typical 3d, 4f and 5f strongly correlated systems. The results show that the accuracy of DSCC is comparable to hybrid functionals, but an order of magnitude faster. In addition, DSCC can reflect the difference in the Coulomb interaction of the same element between metallic and insulating situations, similar to the popular but computationally expensive constrained random phase approximation (cRPA) approach. This feature suggests that DSCC is also a promising method for simulating Coulomb interaction parameters.
title Doubly screened Coulomb correction approach for strongly correlated systems
topic Strongly Correlated Electrons
Materials Science
Chemical Physics
url https://arxiv.org/abs/2307.07745