Electrical detection of the flat band dispersion in van der Waals field-effect structures
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866917702143049728 |
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| author | Pasquale, Gabriele Lopriore, Edoardo Sun, Zhe Čerņevičs, Kristiāns Tagarelli, Fedele Watanabe, Kenji Taniguchi, Takashi Yazyev, Oleg V. Kis, Andras |
| author_facet | Pasquale, Gabriele Lopriore, Edoardo Sun, Zhe Čerņevičs, Kristiāns Tagarelli, Fedele Watanabe, Kenji Taniguchi, Takashi Yazyev, Oleg V. Kis, Andras |
| contents | Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat band position in field-effect structures are slowing down the investigation of their properties. In this work, we employ Indium Selenide (InSe) as a flat-band system due to a van Hove singularity at the valence band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunneling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunneling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunneling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of 2D materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2307_09937 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Electrical detection of the flat band dispersion in van der Waals field-effect structures Pasquale, Gabriele Lopriore, Edoardo Sun, Zhe Čerņevičs, Kristiāns Tagarelli, Fedele Watanabe, Kenji Taniguchi, Takashi Yazyev, Oleg V. Kis, Andras Mesoscale and Nanoscale Physics Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat band position in field-effect structures are slowing down the investigation of their properties. In this work, we employ Indium Selenide (InSe) as a flat-band system due to a van Hove singularity at the valence band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunneling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunneling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunneling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of 2D materials. |
| title | Electrical detection of the flat band dispersion in van der Waals field-effect structures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2307.09937 |