Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866929204355923968 |
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| author | Rodríguez-Mena, Esteban A. Abadillo-Uriel, José Carlos Veste, Gaëtan Martinez, Biel Li, Jing Sklénard, Benoît Niquet, Yann-Michel |
| author_facet | Rodríguez-Mena, Esteban A. Abadillo-Uriel, José Carlos Veste, Gaëtan Martinez, Biel Li, Jing Sklénard, Benoît Niquet, Yann-Michel |
| contents | We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2307_10007 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits Rodríguez-Mena, Esteban A. Abadillo-Uriel, José Carlos Veste, Gaëtan Martinez, Biel Li, Jing Sklénard, Benoît Niquet, Yann-Michel Mesoscale and Nanoscale Physics We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains. |
| title | Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2307.10007 |