Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866910285479018496 |
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| author | Beccard, Henrik Beyreuther, Elke Kirbus, Benjamin Seddon, Samuel D. Rüsing, Michael Eng, Lukas M. |
| author_facet | Beccard, Henrik Beyreuther, Elke Kirbus, Benjamin Seddon, Samuel D. Rüsing, Michael Eng, Lukas M. |
| contents | For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200-$μ$m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2308_00061 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall Beccard, Henrik Beyreuther, Elke Kirbus, Benjamin Seddon, Samuel D. Rüsing, Michael Eng, Lukas M. Materials Science Applied Physics For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200-$μ$m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$. |
| title | Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2308.00061 |