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Autores principales: Choi, Yujun, Joynt, Robert
Formato: Preprint
Publicado: 2023
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Acceso en línea:https://arxiv.org/abs/2308.00711
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author Choi, Yujun
Joynt, Robert
author_facet Choi, Yujun
Joynt, Robert
contents Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the system as gate operations are applied. We show that the main features of this phenomenon can be explained by the two-level systems that can also produce charge noise, if these systems are considered to form an interacting random-field glass. The most striking feature of the theory is that the frequency shift can be non-monotonic in temperature. The success of the theory narrows considerably the possible models for the two-level systems.
format Preprint
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institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Interacting Random-field Dipole Defect Model for Heating in Semiconductor-based Qubit Devices
Choi, Yujun
Joynt, Robert
Quantum Physics
Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the system as gate operations are applied. We show that the main features of this phenomenon can be explained by the two-level systems that can also produce charge noise, if these systems are considered to form an interacting random-field glass. The most striking feature of the theory is that the frequency shift can be non-monotonic in temperature. The success of the theory narrows considerably the possible models for the two-level systems.
title Interacting Random-field Dipole Defect Model for Heating in Semiconductor-based Qubit Devices
topic Quantum Physics
url https://arxiv.org/abs/2308.00711