Hall Coefficient and Resistivity in the Doped Bilayer Hubbard Model

Fuente: arXiv
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Autores principales: Shi, Yin, Schirmer, Jonathan, Chen, Long-Qing
Formato: Preprint
Publicado: 2023
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author Shi, Yin
Schirmer, Jonathan
Chen, Long-Qing
author_facet Shi, Yin
Schirmer, Jonathan
Chen, Long-Qing
contents Finding and understanding non-Fermi liquid transport behaviors are at the core of condensed matter physics. Most of the existing studies were devoted to the monolayer Hubbard model, which is the simplest model that captures essential features of high-temperature superconductivity. Here we discover a new type of non-Fermi liquid behavior emergent in the hole-doped bilayer Hubbard model, using dynamical mean-field theory with a full consideration of the short-range interlayer electron correlation. We find that at low temperatures, the Hall coefficient has a strong nonmonotonic dependence on temperature, leading to a double or quadruple reversal of its sign depending on the doping level. At the same time, the resistivity exhibits two plateaus rather than linearity in its temperature dependence. We show that these intriguing transport behaviors stem from the formation of coherent interlayer singlets, which scatter off gapped collective modes arising from short-range interlayer antiferromagnetic fluctuations.
format Preprint
id arxiv_https___arxiv_org_abs_2308_03862
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Hall Coefficient and Resistivity in the Doped Bilayer Hubbard Model
Shi, Yin
Schirmer, Jonathan
Chen, Long-Qing
Strongly Correlated Electrons
Finding and understanding non-Fermi liquid transport behaviors are at the core of condensed matter physics. Most of the existing studies were devoted to the monolayer Hubbard model, which is the simplest model that captures essential features of high-temperature superconductivity. Here we discover a new type of non-Fermi liquid behavior emergent in the hole-doped bilayer Hubbard model, using dynamical mean-field theory with a full consideration of the short-range interlayer electron correlation. We find that at low temperatures, the Hall coefficient has a strong nonmonotonic dependence on temperature, leading to a double or quadruple reversal of its sign depending on the doping level. At the same time, the resistivity exhibits two plateaus rather than linearity in its temperature dependence. We show that these intriguing transport behaviors stem from the formation of coherent interlayer singlets, which scatter off gapped collective modes arising from short-range interlayer antiferromagnetic fluctuations.
title Hall Coefficient and Resistivity in the Doped Bilayer Hubbard Model
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2308.03862