Growth of aligned and twisted hexagonal boron nitride on Ir(110)
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866910331722268672 |
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| author | Michely, Thomas Bergelt, Jason Safeer, Affan Bäder, Alexander Hartl, Tobias Fischer, Jeison |
| author_facet | Michely, Thomas Bergelt, Jason Safeer, Affan Bäder, Alexander Hartl, Tobias Fischer, Jeison |
| contents | The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN The presence of the h-BN overlayer suppresses the formation of the nano-faceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a (1 $\times$ n) reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Our moiré analysis showcases a precise methodology for determining both the moiré periodicity and the h-BN lattice parameter on an fcc(110) surface. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2308_06074 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Growth of aligned and twisted hexagonal boron nitride on Ir(110) Michely, Thomas Bergelt, Jason Safeer, Affan Bäder, Alexander Hartl, Tobias Fischer, Jeison Materials Science Mesoscale and Nanoscale Physics The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN The presence of the h-BN overlayer suppresses the formation of the nano-faceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a (1 $\times$ n) reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Our moiré analysis showcases a precise methodology for determining both the moiré periodicity and the h-BN lattice parameter on an fcc(110) surface. |
| title | Growth of aligned and twisted hexagonal boron nitride on Ir(110) |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2308.06074 |