Image de couverture de livre

Direct determination of the spin-polarization at buried interfaces using voltage dependent MOKE signals

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Miller, Michael, Nacke, Rene, Ilse, Sven, Schütz, Gisela, Goering, Eberhard
Format:	Preprint
Publié:	2023
Sujets:	Applied Physics Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Lattice matched heterogeneous nucleation eliminate defective buried interface in halide perovskites
par: Ahlawat, Paramvir, et autres
Publié: (2024)

Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement
par: Jiang, Dingsong, et autres
Publié: (2024)

Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
par: Natani, S., et autres
Publié: (2025)

Three-dimensional imaging of buried heterointerfaces
par: O'Leary, Colum M., et autres
Publié: (2023)

Simultaneous measurement of pressure-dependent bulk and interfacial thermal properties in thermal interface materials using square-pulsed source thermoreflectance
par: Chen, Tao, et autres
Publié: (2026)

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor
par: Durham, Daniel B, et autres
Publié: (2024)

Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices
par: Paradezhenko, Georgii, et autres
Publié: (2023)

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells
par: Sood, Mohit, et autres
Publié: (2021)

Load-dependent Hardness Prediction for Materials using Machine Learning
par: Mukherjee, Madhubanti, et autres
Publié: (2026)

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
par: Liu, Lixin, et autres
Publié: (2025)

Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV
par: Yin, Kang, et autres
Publié: (2024)

Terahertz-field activation of polar skyrons
par: Wang, Huaiyu, et autres
Publié: (2025)

Protection of metal interfaces against hydrogen-assisted cracking
par: Hachet, Guillaume, et autres
Publié: (2025)

Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
par: Huang, H-W S., et autres
Publié: (2025)

Symmetry and nonlinearity of spin wave resonance excited by focused surface acoustic waves
par: Shah, Piyush J., et autres
Publié: (2023)

Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
par: Song, Seunguk, et autres
Publié: (2025)

Origin of interface limitation in CuInS$_2$ based solar cells
par: Sood, Mohit, et autres
Publié: (2021)

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
par: Fiorenza, Patrick, et autres
Publié: (2024)

Direct observation of propagating spin waves in a spin-Hall nano-oscillator
par: González, Victor H., et autres
Publié: (2026)

Manipulating ferroelectric topological polar structures with twisted light
par: Nazirkar, Nimish, et autres
Publié: (2024)

Unveiling the effect of adding B4C at the W-on-Si interface
par: Valpreda, Adele, et autres
Publié: (2025)

Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)
par: Stocek, Noah B., et autres
Publié: (2023)

In-situ Plasma Studies using a Direct Current Microplasma in a Scanning Electron Microscope
par: Grünewald, Lukas, et autres
Publié: (2023)

Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: A study of material, interface and device properties
par: Sun, M., et autres
Publié: (2025)

Large spin signal and spin rectification in folded-bilayer graphene
par: Hoque, Md. Anamul, et autres
Publié: (2025)

Leveraging both faces of polar semiconductor wafers for functional devices
par: van Deurzen, Len, et autres
Publié: (2024)

Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells
par: Xu, Xiao, et autres
Publié: (2023)

Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
par: Engl, Moritz, et autres
Publié: (2025)

Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence
par: Wang, T., et autres
Publié: (2022)

Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
par: Morozov, A. P., et autres
Publié: (2024)

The completed High-Low method for interface state density analysis in MOS capacitors
par: Rummel, Brian D., et autres
Publié: (2026)

Stabilized biskyrmion states in annealed CoFeB bilayer with different interfaces
par: Saidi, W. Al, et autres
Publié: (2025)

Anisotropic manipulation of terahertz spin-waves by spin-orbit torque in a canted antiferromagnet
par: Kim, T. H., et autres
Publié: (2024)

Accurate determination of thermoelectric figure of merit using ac Harman method with a four-probe configuration
par: Okawa, Kenjiro, et autres
Publié: (2024)

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
par: Pampili, Pietro, et autres
Publié: (2024)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
par: Abbasi, Haris Naeem, et autres
Publié: (2024)

Ultra-clean interface between high k dielectric and 2D MoS2
par: Yan, Han, et autres
Publié: (2025)

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface
par: Kalem, Seref
Publié: (2025)

Multi-interface engineering to realize all-solution processed highly efficient Kesterite solar cells
par: Lou, Licheng, et autres
Publié: (2024)

Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell
par: Adhikari, Abinash, et autres
Publié: (2024)