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Main Authors: Yang, Ning-Jing, Zhang, Jian-Min
Format: Preprint
Published: 2023
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Online Access:https://arxiv.org/abs/2308.07550
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author Yang, Ning-Jing
Zhang, Jian-Min
author_facet Yang, Ning-Jing
Zhang, Jian-Min
contents Higher-order topological properties of two-dimensional(2D) magnetic materials have recently been proposed. In 2D ferromagnetic Janus materials, we find that ScClI is a second-order topological insulator (SOTI). By means of a multi-orbital tight-binding model, we analyze the orbital contributions of higher-order topologies. Further, we give the complete high-order topological phase diagram of ScClI, based on the external field modulation of the magneto-valley coupling and energy levels. 2D ScClI has a pronounced valley polarization, which causes different insulating phases to exhibit completely different anomalous Nernst conductance. As a result, we use the matched anomalous Nernst effect to reveal the topological phase transition process of ScClI. We utilize the characteristics of valley electronics to link higher-order topological materials with the anomalous Nernst effect, which has potential implications for high-order topological insulators and valley electronics.
format Preprint
id arxiv_https___arxiv_org_abs_2308_07550
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle High-Order Topological Phase Diagram Revealed by Anomalous Nernst Effect in Janus ScClI Monolayer
Yang, Ning-Jing
Zhang, Jian-Min
Mesoscale and Nanoscale Physics
Higher-order topological properties of two-dimensional(2D) magnetic materials have recently been proposed. In 2D ferromagnetic Janus materials, we find that ScClI is a second-order topological insulator (SOTI). By means of a multi-orbital tight-binding model, we analyze the orbital contributions of higher-order topologies. Further, we give the complete high-order topological phase diagram of ScClI, based on the external field modulation of the magneto-valley coupling and energy levels. 2D ScClI has a pronounced valley polarization, which causes different insulating phases to exhibit completely different anomalous Nernst conductance. As a result, we use the matched anomalous Nernst effect to reveal the topological phase transition process of ScClI. We utilize the characteristics of valley electronics to link higher-order topological materials with the anomalous Nernst effect, which has potential implications for high-order topological insulators and valley electronics.
title High-Order Topological Phase Diagram Revealed by Anomalous Nernst Effect in Janus ScClI Monolayer
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2308.07550