Disorder-induced linear magnetoresistance in Al$_2$O$_3$/SrTiO$_3$ heterostructures

Fuente: arXiv
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Main Authors: Hong, Gao Kuang, Tie, Lin, Rong, Ma Xiao, Lin, Li Qiu, Qing, Li Zhi
Format: Preprint
Published: 2023
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_version_ 1866910288114089984
author Hong, Gao Kuang
Tie, Lin
Rong, Ma Xiao
Lin, Li Qiu
Qing, Li Zhi
author_facet Hong, Gao Kuang
Tie, Lin
Rong, Ma Xiao
Lin, Li Qiu
Qing, Li Zhi
contents An unsaturated linear magnetoresistance (LMR) has attracted widely attention because of potential applications and fundamental interest. By controlling growth temperature, we realized a metal-to-insulator transition in Al2O3/SrTiO3 heterostructures. The LMR is observed in metallic samples with electron mobility varying over three orders of magnitude. The observed LMR cannot be explained by the guiding center diffusion model even in samples with very high mobility. The slope of the observed LMR is proportional to Hall mobility, and the crossover field, indicating a transition from quadratic (at low fields) to linear (at high fields) field dependence, is proportional to the inverse Hall mobility. This signifies that the classical model is valid to explain the observed LMR. More importantly, we develop an analytical expression according to the effective-medium theory that is equivalent to the classical model. And the analytical expression describes the LMR data very well, confirming the validity of the classical model.
format Preprint
id arxiv_https___arxiv_org_abs_2308_10152
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Disorder-induced linear magnetoresistance in Al$_2$O$_3$/SrTiO$_3$ heterostructures
Hong, Gao Kuang
Tie, Lin
Rong, Ma Xiao
Lin, Li Qiu
Qing, Li Zhi
Mesoscale and Nanoscale Physics
74-05, 14J81
An unsaturated linear magnetoresistance (LMR) has attracted widely attention because of potential applications and fundamental interest. By controlling growth temperature, we realized a metal-to-insulator transition in Al2O3/SrTiO3 heterostructures. The LMR is observed in metallic samples with electron mobility varying over three orders of magnitude. The observed LMR cannot be explained by the guiding center diffusion model even in samples with very high mobility. The slope of the observed LMR is proportional to Hall mobility, and the crossover field, indicating a transition from quadratic (at low fields) to linear (at high fields) field dependence, is proportional to the inverse Hall mobility. This signifies that the classical model is valid to explain the observed LMR. More importantly, we develop an analytical expression according to the effective-medium theory that is equivalent to the classical model. And the analytical expression describes the LMR data very well, confirming the validity of the classical model.
title Disorder-induced linear magnetoresistance in Al$_2$O$_3$/SrTiO$_3$ heterostructures
topic Mesoscale and Nanoscale Physics
74-05, 14J81
url https://arxiv.org/abs/2308.10152