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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2308.10687 |
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| _version_ | 1866914953704767488 |
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| author | Chen, Danxuan Jiang, Jin Weatherley, Thomas F. K. Carlin, Jean-François Banerjee, Mitali Grandjean, Nicolas |
| author_facet | Chen, Danxuan Jiang, Jin Weatherley, Thomas F. K. Carlin, Jean-François Banerjee, Mitali Grandjean, Nicolas |
| contents | III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS$_2$ in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS$_2$ coating. Furthermore, a strong interplay is observed between MoS$_2$ monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as Förster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2308_10687 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer Chen, Danxuan Jiang, Jin Weatherley, Thomas F. K. Carlin, Jean-François Banerjee, Mitali Grandjean, Nicolas Mesoscale and Nanoscale Physics Applied Physics III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS$_2$ in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS$_2$ coating. Furthermore, a strong interplay is observed between MoS$_2$ monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as Förster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures. |
| title | Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2308.10687 |