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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2308.10687 |
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Table of Contents:
- III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS$_2$ in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS$_2$ coating. Furthermore, a strong interplay is observed between MoS$_2$ monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as Förster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures.