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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2308.10919 |
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| _version_ | 1866911959700471808 |
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| author | Pan, Zuojian Chen, Zhizhong Chen, Yiyong Zhang, Haodong Yang, Han Nie, Jingxin Deng, Chuhan Dong, Boyan Wang, Daqi Li, Yuchen Chen, Weihua Jiao, Fei Kang, Xiangning Jia, Chuanyu Liang, Zhiwen Wang, Qi Zhang, Guoyi Shen, Bo |
| author_facet | Pan, Zuojian Chen, Zhizhong Chen, Yiyong Zhang, Haodong Yang, Han Nie, Jingxin Deng, Chuhan Dong, Boyan Wang, Daqi Li, Yuchen Chen, Weihua Jiao, Fei Kang, Xiangning Jia, Chuanyu Liang, Zhiwen Wang, Qi Zhang, Guoyi Shen, Bo |
| contents | Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2308_10919 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates Pan, Zuojian Chen, Zhizhong Chen, Yiyong Zhang, Haodong Yang, Han Nie, Jingxin Deng, Chuhan Dong, Boyan Wang, Daqi Li, Yuchen Chen, Weihua Jiao, Fei Kang, Xiangning Jia, Chuanyu Liang, Zhiwen Wang, Qi Zhang, Guoyi Shen, Bo Materials Science Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films. |
| title | Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates |
| topic | Materials Science |
| url | https://arxiv.org/abs/2308.10919 |