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| Hauptverfasser: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2023
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| Online-Zugang: | https://arxiv.org/abs/2308.12765 |
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| _version_ | 1866911330102935552 |
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| author | Yan, Shaohua He, Hui-Hui Fu, Yang Zhao, Ning-Ning Tian, Shangjie Yin, Qiangwei Meng, Fanyu Cao, Xinyu Wang, Le Chen, Shanshan Son, Ki-Hoon Choi, Jun Woo Ryu, Hyejin Wang, Shouguo Zhang, Xiao Liu, Kai Lei, Hechang |
| author_facet | Yan, Shaohua He, Hui-Hui Fu, Yang Zhao, Ning-Ning Tian, Shangjie Yin, Qiangwei Meng, Fanyu Cao, Xinyu Wang, Le Chen, Shanshan Son, Ki-Hoon Choi, Jun Woo Ryu, Hyejin Wang, Shouguo Zhang, Xiao Liu, Kai Lei, Hechang |
| contents | Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (~ 323 K - 337 K) is almost unchanged when thickness is down to 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2308_12765 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 Yan, Shaohua He, Hui-Hui Fu, Yang Zhao, Ning-Ning Tian, Shangjie Yin, Qiangwei Meng, Fanyu Cao, Xinyu Wang, Le Chen, Shanshan Son, Ki-Hoon Choi, Jun Woo Ryu, Hyejin Wang, Shouguo Zhang, Xiao Liu, Kai Lei, Hechang Materials Science Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (~ 323 K - 337 K) is almost unchanged when thickness is down to 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics. |
| title | Nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2308.12765 |