Disorder-induced phase transitions in double HgTe quantum wells
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| Main Authors: | , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866910806327689216 |
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| author | Krishtopenko, S. S. Ikonnikov, A. V. Jouault, B. Teppe, F. |
| author_facet | Krishtopenko, S. S. Ikonnikov, A. V. Jouault, B. Teppe, F. |
| contents | By using the self-consistent Born approximation, we investigate topological phase transitions in double HgTe quantum wells (QWs) induced by the short-range impurities. Following the evolution of the density-of-states and the spectral function, we demonstrate multiple closings and openings of the band-gap with the increase of the disorder strength due to the mutual inversions between the first and second electron-like and hole-like subbands. We show that starting from a band insulator in the clean limit, under the influence of disorder, the double HgTe QW undergoes a transition, first into a semimetal state similar to "bilayer graphene", and then into a high-order topological insulator state with a double band inversion. We find out that all disorder-induced transitions can be fully characterized by introducing a non-Hermitian quasiparticle Hamiltonian encoding the band structure renormalization and quasiparticle decay. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2308_13440 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Disorder-induced phase transitions in double HgTe quantum wells Krishtopenko, S. S. Ikonnikov, A. V. Jouault, B. Teppe, F. Mesoscale and Nanoscale Physics Materials Science By using the self-consistent Born approximation, we investigate topological phase transitions in double HgTe quantum wells (QWs) induced by the short-range impurities. Following the evolution of the density-of-states and the spectral function, we demonstrate multiple closings and openings of the band-gap with the increase of the disorder strength due to the mutual inversions between the first and second electron-like and hole-like subbands. We show that starting from a band insulator in the clean limit, under the influence of disorder, the double HgTe QW undergoes a transition, first into a semimetal state similar to "bilayer graphene", and then into a high-order topological insulator state with a double band inversion. We find out that all disorder-induced transitions can be fully characterized by introducing a non-Hermitian quasiparticle Hamiltonian encoding the band structure renormalization and quasiparticle decay. |
| title | Disorder-induced phase transitions in double HgTe quantum wells |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2308.13440 |