Supercell formation in epitaxial rare-earth ditelluride thin films
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866915946320363520 |
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| author | Llanos, Adrian Salmani-Rezaie, Salva Kim, Jinwoong Kioussis, Nicholas Muller, David A. Falson, Joseph |
| author_facet | Llanos, Adrian Salmani-Rezaie, Salva Kim, Jinwoong Kioussis, Nicholas Muller, David A. Falson, Joseph |
| contents | Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-δ}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieved as the thickness increases up to a value of approximately 20 unit cells. Diffraction features associated with a supercell in the films are resolved which is coupled with Te-deficiency. First principles calculations attribute the formation of this defect lattice to nesting conditions in the Fermi surface, which produce a periodic occupancy of the conducting Te square-net, and opens a band gap at the chemical potential. This work establishes the groundwork for exploring the role of strain in tuning electronic and structural phases of epitaxial square-net tellurides and related compounds. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2308_14159 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Supercell formation in epitaxial rare-earth ditelluride thin films Llanos, Adrian Salmani-Rezaie, Salva Kim, Jinwoong Kioussis, Nicholas Muller, David A. Falson, Joseph Materials Science Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-δ}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieved as the thickness increases up to a value of approximately 20 unit cells. Diffraction features associated with a supercell in the films are resolved which is coupled with Te-deficiency. First principles calculations attribute the formation of this defect lattice to nesting conditions in the Fermi surface, which produce a periodic occupancy of the conducting Te square-net, and opens a band gap at the chemical potential. This work establishes the groundwork for exploring the role of strain in tuning electronic and structural phases of epitaxial square-net tellurides and related compounds. |
| title | Supercell formation in epitaxial rare-earth ditelluride thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2308.14159 |