Fabrication of a Silicon Electron Multiplier sensor using Metal Assisted Chemical Etching and its characterisation

Fuente: arXiv
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Autori principali: Halvorsen, Marius Mæhlum, Coco, Victor, Collins, Paula, Sandaker, Heidi, Romano, Lucia
Natura: Preprint
Pubblicazione: 2023
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_version_ 1866914651021770752
author Halvorsen, Marius Mæhlum
Coco, Victor
Collins, Paula
Sandaker, Heidi
Romano, Lucia
author_facet Halvorsen, Marius Mæhlum
Coco, Victor
Collins, Paula
Sandaker, Heidi
Romano, Lucia
contents The Silicon Electron Multiplier (SiEM) sensor is a novel sensor concept that enables charge multiplication by high electric fields generated by embedded metal electrodes within the sensor bulk. Metal assisted chemical etching (MacEtch) in gas phase with platinum as a catalyst has been used to fabricate test structures consisting of vertically aligned silicon pillars and strips on top of a silicon bulk. The pillars exceed 10 $μm$ in height with a diameter of 1.0 $μm$ and are arranged as a hexagonal lattice with a pitch of 1.5 $μm$. Electrical characterisations through current $-$ voltage measurements inside a scanning electron microscope and a climate chamber have demonstrated that the MacEtch process is compatible with active media and p-n junctions.
format Preprint
id arxiv_https___arxiv_org_abs_2308_14195
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Fabrication of a Silicon Electron Multiplier sensor using Metal Assisted Chemical Etching and its characterisation
Halvorsen, Marius Mæhlum
Coco, Victor
Collins, Paula
Sandaker, Heidi
Romano, Lucia
Instrumentation and Detectors
High Energy Physics - Experiment
The Silicon Electron Multiplier (SiEM) sensor is a novel sensor concept that enables charge multiplication by high electric fields generated by embedded metal electrodes within the sensor bulk. Metal assisted chemical etching (MacEtch) in gas phase with platinum as a catalyst has been used to fabricate test structures consisting of vertically aligned silicon pillars and strips on top of a silicon bulk. The pillars exceed 10 $μm$ in height with a diameter of 1.0 $μm$ and are arranged as a hexagonal lattice with a pitch of 1.5 $μm$. Electrical characterisations through current $-$ voltage measurements inside a scanning electron microscope and a climate chamber have demonstrated that the MacEtch process is compatible with active media and p-n junctions.
title Fabrication of a Silicon Electron Multiplier sensor using Metal Assisted Chemical Etching and its characterisation
topic Instrumentation and Detectors
High Energy Physics - Experiment
url https://arxiv.org/abs/2308.14195