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Bibliographic Details
Main Authors: Ma, Xizheng, Zhang, Gengyan, Wu, Feng, Bao, Feng, Chang, Xu, Chen, Jianjun, Deng, Hao, Gao, Ran, Gao, Xun, Hu, Lijuan, Ji, Honghong, Ku, Hsiang-Sheng, Lu, Kannan, Ma, Lu, Mao, Liyong, Song, Zhijun, Sun, Hantao, Tang, Chengchun, Wang, Fei, Wang, Hongcheng, Wang, Tenghui, Xia, Tian, Ying, Make, Zhan, Huijuan, Zhou, Tao, Zhu, Mengyu, Zhu, Qingbin, Shi, Yaoyun, Zhao, Hui-Hai, Deng, Chunqing
Format: Preprint
Published: 2023
Subjects:
Online Access:https://arxiv.org/abs/2308.16040
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Table of Contents:
  • The fluxonium qubits have emerged as a promising platform for gate-based quantum information processing. However, their extraordinary protection against charge fluctuations comes at a cost: when coupled capacitively, the qubit-qubit interactions are restricted to XX-interactions. Consequently, effective XX- or XZ-interactions are only constructed either by temporarily populating higher-energy states, or by exploiting perturbative effects under microwave driving. Instead, we propose and demonstrate an inductive coupling scheme, which offers a wide selection of native qubit-qubit interactions for fluxonium. In particular, we leverage a built-in, flux-controlled ZZ-interaction to perform qubit entanglement. To combat the increased flux-noise-induced dephasing away from the flux-insensitive position, we use a continuous version of the dynamical decoupling scheme to perform noise filtering. Combining these, we demonstrate a 20 ns controlled-Z (CZ) gate with a mean fidelity of 99.53%. More than confirming the efficacy of our gate scheme, this high-fidelity result also reveals a promising but rarely explored parameter space uniquely suitable for gate operations between fluxonium qubits.