Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

Fuente: arXiv
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Autores principales: Meyer, Marcel, Déprez, Corentin, Meijer, Ilja N., Unseld, Florian K., Karwal, Saurabh, Sammak, Amir, Scappucci, Giordano, Vandersypen, Lieven M. K., Veldhorst, Menno
Formato: Preprint
Publicado: 2023
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author Meyer, Marcel
Déprez, Corentin
Meijer, Ilja N.
Unseld, Florian K.
Karwal, Saurabh
Sammak, Amir
Scappucci, Giordano
Vandersypen, Lieven M. K.
Veldhorst, Menno
author_facet Meyer, Marcel
Déprez, Corentin
Meijer, Ilja N.
Unseld, Florian K.
Karwal, Saurabh
Sammak, Amir
Scappucci, Giordano
Vandersypen, Lieven M. K.
Veldhorst, Menno
contents The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.
format Preprint
id arxiv_https___arxiv_org_abs_2309_03591
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
Meyer, Marcel
Déprez, Corentin
Meijer, Ilja N.
Unseld, Florian K.
Karwal, Saurabh
Sammak, Amir
Scappucci, Giordano
Vandersypen, Lieven M. K.
Veldhorst, Menno
Mesoscale and Nanoscale Physics
Quantum Physics
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.
title Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2309.03591