Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866908318896750592 |
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| author | de Brito, C. Serati Junior, P. E. Faria Ghiasi, T. S. Ingla-Aynés, J. Rabahi, C. R. Cavalini, C. Dirnberger, F. Mañas-Valero, S. Watanabe, K. Taniguchi, T. Zollner, K. Fabian, J. Schüller, C. van der Zant, H. S. J. Gobato, Y. Galvão . |
| author_facet | de Brito, C. Serati Junior, P. E. Faria Ghiasi, T. S. Ingla-Aynés, J. Rabahi, C. R. Cavalini, C. Dirnberger, F. Mañas-Valero, S. Watanabe, K. Taniguchi, T. Zollner, K. Fabian, J. Schüller, C. van der Zant, H. S. J. Gobato, Y. Galvão . |
| contents | Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe$_2$, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley $g$-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first principles calculations suggest that MoSe$_2$/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2309_03766 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr de Brito, C. Serati Junior, P. E. Faria Ghiasi, T. S. Ingla-Aynés, J. Rabahi, C. R. Cavalini, C. Dirnberger, F. Mañas-Valero, S. Watanabe, K. Taniguchi, T. Zollner, K. Fabian, J. Schüller, C. van der Zant, H. S. J. Gobato, Y. Galvão . Mesoscale and Nanoscale Physics Materials Science Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe$_2$, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley $g$-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first principles calculations suggest that MoSe$_2$/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices. |
| title | Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2309.03766 |