3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate

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Hauptverfasser: Polaczyński, Jakub, Krizman, Gauthier, Kazakov, Alexandr, Turowski, Bartłomiej, Ortiz, Joaquín Bermejo, Rudniewski, Rafał, Wojciechowski, Tomasz, Dłużewski, Piotr, Aleszkiewicz, Marta, Zaleszczyk, Wojciech, Kurowska, Bogusława, Muhammad, Zahir, Rosmus, Marcin, Olszowska, Natalia, De Vaulchier, Louis-Anne, Guldner, Yves, Wojtowicz, Tomasz, Volobuev, Valentine V.
Format: Preprint
Veröffentlicht: 2023
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author Polaczyński, Jakub
Krizman, Gauthier
Kazakov, Alexandr
Turowski, Bartłomiej
Ortiz, Joaquín Bermejo
Rudniewski, Rafał
Wojciechowski, Tomasz
Dłużewski, Piotr
Aleszkiewicz, Marta
Zaleszczyk, Wojciech
Kurowska, Bogusława
Muhammad, Zahir
Rosmus, Marcin
Olszowska, Natalia
De Vaulchier, Louis-Anne
Guldner, Yves
Wojtowicz, Tomasz
Volobuev, Valentine V.
author_facet Polaczyński, Jakub
Krizman, Gauthier
Kazakov, Alexandr
Turowski, Bartłomiej
Ortiz, Joaquín Bermejo
Rudniewski, Rafał
Wojciechowski, Tomasz
Dłużewski, Piotr
Aleszkiewicz, Marta
Zaleszczyk, Wojciech
Kurowska, Bogusława
Muhammad, Zahir
Rosmus, Marcin
Olszowska, Natalia
De Vaulchier, Louis-Anne
Guldner, Yves
Wojtowicz, Tomasz
Volobuev, Valentine V.
contents $α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
format Preprint
id arxiv_https___arxiv_org_abs_2309_03951
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle 3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
Polaczyński, Jakub
Krizman, Gauthier
Kazakov, Alexandr
Turowski, Bartłomiej
Ortiz, Joaquín Bermejo
Rudniewski, Rafał
Wojciechowski, Tomasz
Dłużewski, Piotr
Aleszkiewicz, Marta
Zaleszczyk, Wojciech
Kurowska, Bogusława
Muhammad, Zahir
Rosmus, Marcin
Olszowska, Natalia
De Vaulchier, Louis-Anne
Guldner, Yves
Wojtowicz, Tomasz
Volobuev, Valentine V.
Materials Science
Mesoscale and Nanoscale Physics
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
title 3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2309.03951