Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866916112477716480 |
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| author | Li, Tianlin Chen, Hanying Wang, Kun Hao, Yifei Zhang, Le Watanabe, Kenji Taniguchi, Takashi Hong, Xia |
| author_facet | Li, Tianlin Chen, Hanying Wang, Kun Hao, Yifei Zhang, Le Watanabe, Kenji Taniguchi, Takashi Hong, Xia |
| contents | One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving electron lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ back-gates patterned with periodic, 100-200 nm wide stripe domains. Due to band reconstruction, the h-BN top-gating induces satellite Dirac points in samples with current along the superlattice vector $\hat{s}$, a feature absent in samples with current perpendicular to $\hat{s}$. The satellite Dirac point position scales with the superlattice period ($L$) as $\propto L^β$, with $β= -1.18 \pm 0.06$. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to $\hat{s}$ quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2309_04931 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit Li, Tianlin Chen, Hanying Wang, Kun Hao, Yifei Zhang, Le Watanabe, Kenji Taniguchi, Takashi Hong, Xia Mesoscale and Nanoscale Physics Materials Science One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving electron lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ back-gates patterned with periodic, 100-200 nm wide stripe domains. Due to band reconstruction, the h-BN top-gating induces satellite Dirac points in samples with current along the superlattice vector $\hat{s}$, a feature absent in samples with current perpendicular to $\hat{s}$. The satellite Dirac point position scales with the superlattice period ($L$) as $\propto L^β$, with $β= -1.18 \pm 0.06$. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to $\hat{s}$ quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena. |
| title | Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2309.04931 |