Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$
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arXiv
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| Format: | Preprint |
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2023
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| _version_ | 1866916488796962816 |
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| author | Huang, Chaoxin Huo, Mengwu Huang, Xing Liu, Hui Li, Lisi Zhang, Ziyou Chen, Zhiqiang Han, Yifeng Chen, Lan Liang, Feixiang Dong, Hongliang Shen, Bing Sun, Hualei Wang, Meng |
| author_facet | Huang, Chaoxin Huo, Mengwu Huang, Xing Liu, Hui Li, Lisi Zhang, Ziyou Chen, Zhiqiang Han, Yifeng Chen, Lan Liang, Feixiang Dong, Hongliang Shen, Bing Sun, Hualei Wang, Meng |
| contents | Ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$. As the substitution of nonmagnetic Mg$^{2+}$ for magnetic Mn$^{2+}$, ferrimagnetic transition temperature $T_C$ gradually decreases, while the resistivity increases significantly. At the same time, the CMR and AMR are both enhanced for the low-doping compositions (e.g., $x = 0.1$ and 0.2), which can be attributed to doping-induced broadening of the band gap and a larger variation range of the resistivity when undergoing a metal-insulator transition by applying a magnetic field along the $c$ axis. On the contrary, $T_C$ rises with increasing pressure due to the enhancement of the magnetic exchange interactions until a structural transition occurs at $\sim$13 GPa. Meanwhile, the activation gap is lowered under pressure and the magnetoresistance is decreased dramatically above 6 GPa where the gap is closed. At 20 and 26 GPa, evidences for a superconducting transition at $\sim$5 K are observed. The results reveal that doping and pressure are effective methods to tune the activation gap, and correspondingly, the CMR and AMR in nodal-line semiconductors, providing an approach to investigate the magnetoresistance materials for novel spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2309_05945 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$ Huang, Chaoxin Huo, Mengwu Huang, Xing Liu, Hui Li, Lisi Zhang, Ziyou Chen, Zhiqiang Han, Yifeng Chen, Lan Liang, Feixiang Dong, Hongliang Shen, Bing Sun, Hualei Wang, Meng Materials Science Strongly Correlated Electrons Ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$. As the substitution of nonmagnetic Mg$^{2+}$ for magnetic Mn$^{2+}$, ferrimagnetic transition temperature $T_C$ gradually decreases, while the resistivity increases significantly. At the same time, the CMR and AMR are both enhanced for the low-doping compositions (e.g., $x = 0.1$ and 0.2), which can be attributed to doping-induced broadening of the band gap and a larger variation range of the resistivity when undergoing a metal-insulator transition by applying a magnetic field along the $c$ axis. On the contrary, $T_C$ rises with increasing pressure due to the enhancement of the magnetic exchange interactions until a structural transition occurs at $\sim$13 GPa. Meanwhile, the activation gap is lowered under pressure and the magnetoresistance is decreased dramatically above 6 GPa where the gap is closed. At 20 and 26 GPa, evidences for a superconducting transition at $\sim$5 K are observed. The results reveal that doping and pressure are effective methods to tune the activation gap, and correspondingly, the CMR and AMR in nodal-line semiconductors, providing an approach to investigate the magnetoresistance materials for novel spintronic devices. |
| title | Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$ |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2309.05945 |