Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO$_3$/SrTiO$_3$ Interface
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2023
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866929556893466624 |
|---|---|
| author | Tuvia, G. Burshtein, A. Silber, I. Aharony, A. Entin-Wohlman, O. Goldstein, M. Dagan, Y. |
| author_facet | Tuvia, G. Burshtein, A. Silber, I. Aharony, A. Entin-Wohlman, O. Goldstein, M. Dagan, Y. |
| contents | Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce non-linear transport effects ($V\sim I^2$). Here, we focus on such effects to study the role of SOI in the (111) LaTiO$_3$/SrTiO$_3$ interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall-response through the entire gate-voltage range studied. We report a pronounced rise in the non-linear resistance at a critical in-plane field $H_{cr}$. This rise disappears with a small out-of-plane field. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi surface, and consequently changes the symmetry of the Fermi contours and intensifies the non-linear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the non-linear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2309_07706 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO$_3$/SrTiO$_3$ Interface Tuvia, G. Burshtein, A. Silber, I. Aharony, A. Entin-Wohlman, O. Goldstein, M. Dagan, Y. Strongly Correlated Electrons Mesoscale and Nanoscale Physics Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce non-linear transport effects ($V\sim I^2$). Here, we focus on such effects to study the role of SOI in the (111) LaTiO$_3$/SrTiO$_3$ interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall-response through the entire gate-voltage range studied. We report a pronounced rise in the non-linear resistance at a critical in-plane field $H_{cr}$. This rise disappears with a small out-of-plane field. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi surface, and consequently changes the symmetry of the Fermi contours and intensifies the non-linear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the non-linear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario. |
| title | Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO$_3$/SrTiO$_3$ Interface |
| topic | Strongly Correlated Electrons Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2309.07706 |