Engineering ferroelectricity in monoclinic hafnia
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| _version_ | 1866917708468060160 |
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| author | Zhao, Hong Jian Fu, Yuhao Yu, Longju Wang, Yanchao Yang, Yurong Bellaiche, Laurent Ma, Yanming |
| author_facet | Zhao, Hong Jian Fu, Yuhao Yu, Longju Wang, Yanchao Yang, Yurong Bellaiche, Laurent Ma, Yanming |
| contents | Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires the stabilization of thermodynamically-metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO$_2$-based ferroelectrics by designing a series of epitaxial (HfO$_2$)$_1$/(CeO$_2$)$_1$ superlattices. The advantages of the designated ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO$_2$. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization $>$25 $μ$C/cm$^2$ and an ultralow polarization-switching energy barrier at $\sim$2.5 meV/atom. Our work may open an entirely new route towards the fabrication of high-performance HfO$_2$ based ferroelectric devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2309_12800 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Engineering ferroelectricity in monoclinic hafnia Zhao, Hong Jian Fu, Yuhao Yu, Longju Wang, Yanchao Yang, Yurong Bellaiche, Laurent Ma, Yanming Materials Science Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires the stabilization of thermodynamically-metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO$_2$-based ferroelectrics by designing a series of epitaxial (HfO$_2$)$_1$/(CeO$_2$)$_1$ superlattices. The advantages of the designated ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO$_2$. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization $>$25 $μ$C/cm$^2$ and an ultralow polarization-switching energy barrier at $\sim$2.5 meV/atom. Our work may open an entirely new route towards the fabrication of high-performance HfO$_2$ based ferroelectric devices. |
| title | Engineering ferroelectricity in monoclinic hafnia |
| topic | Materials Science |
| url | https://arxiv.org/abs/2309.12800 |