Band mixing in the quantum anomalous Hall regime of twisted semiconductor bilayers

Fuente: arXiv
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Auteurs principaux: Abouelkomsan, Ahmed, Reddy, Aidan P., Fu, Liang, Bergholtz, Emil J.
Format: Preprint
Publié: 2023
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author Abouelkomsan, Ahmed
Reddy, Aidan P.
Fu, Liang
Bergholtz, Emil J.
author_facet Abouelkomsan, Ahmed
Reddy, Aidan P.
Fu, Liang
Bergholtz, Emil J.
contents Remarkable recent experiments have observed fractional quantum anomalous Hall (FQAH) effects at zero field and unusually high temperatures in twisted semiconductor bilayer $t$MoTe$_2$. Intriguing observations in these experiments such as the absence of integer Hall effects at twist angles where a fractional Hall effect is observed, do however remain unexplained. The experimental phase diagram as a function of twist angle remains to be established. By comprehensive numerical study, we show that band mixing has large qualitative and quantitative effects on the energetics of competing states and their energy gaps throughout the twist angle range $θ\leq 4^\circ$. This lays the ground for the detailed realistic study of a rich variety of strongly correlated twisted semiconductor multilayers and an understanding of the phase diagram of these fascinating systems.
format Preprint
id arxiv_https___arxiv_org_abs_2309_16548
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Band mixing in the quantum anomalous Hall regime of twisted semiconductor bilayers
Abouelkomsan, Ahmed
Reddy, Aidan P.
Fu, Liang
Bergholtz, Emil J.
Mesoscale and Nanoscale Physics
Materials Science
Strongly Correlated Electrons
Remarkable recent experiments have observed fractional quantum anomalous Hall (FQAH) effects at zero field and unusually high temperatures in twisted semiconductor bilayer $t$MoTe$_2$. Intriguing observations in these experiments such as the absence of integer Hall effects at twist angles where a fractional Hall effect is observed, do however remain unexplained. The experimental phase diagram as a function of twist angle remains to be established. By comprehensive numerical study, we show that band mixing has large qualitative and quantitative effects on the energetics of competing states and their energy gaps throughout the twist angle range $θ\leq 4^\circ$. This lays the ground for the detailed realistic study of a rich variety of strongly correlated twisted semiconductor multilayers and an understanding of the phase diagram of these fascinating systems.
title Band mixing in the quantum anomalous Hall regime of twisted semiconductor bilayers
topic Mesoscale and Nanoscale Physics
Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2309.16548