Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters
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arXiv
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866914767422095360 |
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| author | Cañas, Jesus Rochat, Névine Grenier, Adeline Jannaud, Audrey Saghi, Zineb Rouviere, Jean-Luc Bellet-Amalric, Edith Harikumar, Anjali Bougerol, Catherine Rigutti, Lorenzo Monroy, Eva |
| author_facet | Cañas, Jesus Rochat, Névine Grenier, Adeline Jannaud, Audrey Saghi, Zineb Rouviere, Jean-Luc Bellet-Amalric, Edith Harikumar, Anjali Bougerol, Catherine Rigutti, Lorenzo Monroy, Eva |
| contents | We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30° faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_04201 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters Cañas, Jesus Rochat, Névine Grenier, Adeline Jannaud, Audrey Saghi, Zineb Rouviere, Jean-Luc Bellet-Amalric, Edith Harikumar, Anjali Bougerol, Catherine Rigutti, Lorenzo Monroy, Eva Applied Physics Materials Science We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30° faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations. |
| title | Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2310.04201 |