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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2023
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| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2310.04201 |
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Table des matières:
- We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30° faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations.