Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866915185434820608 |
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| author | Ruiz, M Gómez Castro, Aron Herranz, Jesús da Silva, Alessandra Trampert, Achim Brandt, Oliver Geelhaar, Lutz Lähnemann, Jonas |
| author_facet | Ruiz, M Gómez Castro, Aron Herranz, Jesús da Silva, Alessandra Trampert, Achim Brandt, Oliver Geelhaar, Lutz Lähnemann, Jonas |
| contents | (In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In,Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) fl ux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In,Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_05582 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy Ruiz, M Gómez Castro, Aron Herranz, Jesús da Silva, Alessandra Trampert, Achim Brandt, Oliver Geelhaar, Lutz Lähnemann, Jonas Materials Science Applied Physics (In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In,Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) fl ux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In,Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms. |
| title | Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2310.05582 |