Interplay between electron correlations, magnetic state, and structural confinement in LaNiO3 ultrathin films

Fuente: arXiv
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Autores principales: Vambold, N. O., Sazhaev, G. A., Leonov, I. V.
Formato: Preprint
Publicado: 2023
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author Vambold, N. O.
Sazhaev, G. A.
Leonov, I. V.
author_facet Vambold, N. O.
Sazhaev, G. A.
Leonov, I. V.
contents We report a theoretical study of the effects of electron correlations and structural confinement on the electronic properties and magnetic state of LaNiO3 (LNO) thin films epitaxially deposited on the (001) LaAlO3 (LAO) substrate. Using the DFT+U method we compute the electronic band structure, magnetic properties, and phase stability of the 1.5 unit-cell-thick NiO2-terminated LNO thin films. Our results reveal complex diversity of the electronic states caused by the effects of structural confinement, interfacial charge transfer and electronic correlations. Our calculations suggest the appearance of in-plane (110) charge disproportionation of the Ni ions in the interface NiO2 layer of the antiferromagnetically ordered LNO thin films. Moreover, the electronic states of both the AFM and FM LNO/LAO show a large orbital polarization of the Ni ions in the surface NiO2 layers. We propose the crucial importance of oxygen defects to explain the metal-to-insulator phase transition experimentally observed in a few-unit-cell-thick LNO/LAO thin films.
format Preprint
id arxiv_https___arxiv_org_abs_2310_07705
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Interplay between electron correlations, magnetic state, and structural confinement in LaNiO3 ultrathin films
Vambold, N. O.
Sazhaev, G. A.
Leonov, I. V.
Strongly Correlated Electrons
Materials Science
We report a theoretical study of the effects of electron correlations and structural confinement on the electronic properties and magnetic state of LaNiO3 (LNO) thin films epitaxially deposited on the (001) LaAlO3 (LAO) substrate. Using the DFT+U method we compute the electronic band structure, magnetic properties, and phase stability of the 1.5 unit-cell-thick NiO2-terminated LNO thin films. Our results reveal complex diversity of the electronic states caused by the effects of structural confinement, interfacial charge transfer and electronic correlations. Our calculations suggest the appearance of in-plane (110) charge disproportionation of the Ni ions in the interface NiO2 layer of the antiferromagnetically ordered LNO thin films. Moreover, the electronic states of both the AFM and FM LNO/LAO show a large orbital polarization of the Ni ions in the surface NiO2 layers. We propose the crucial importance of oxygen defects to explain the metal-to-insulator phase transition experimentally observed in a few-unit-cell-thick LNO/LAO thin films.
title Interplay between electron correlations, magnetic state, and structural confinement in LaNiO3 ultrathin films
topic Strongly Correlated Electrons
Materials Science
url https://arxiv.org/abs/2310.07705