Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866909377291616256 |
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| author | Schulte, Kevin L. Friedman, Daniel J. Dada, Titilope Guthrey, Harvey L. da Costa, Edgard Winter Tervo, Eric J. France, Ryan M. Geisz, John F. Steiner, Myles A. |
| author_facet | Schulte, Kevin L. Friedman, Daniel J. Dada, Titilope Guthrey, Harvey L. da Costa, Edgard Winter Tervo, Eric J. France, Ryan M. Geisz, John F. Steiner, Myles A. |
| contents | We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and 8.9x10^6 cm^-2 on InP and GaAs, respectively. The devices generate open-circuit voltages of 0.386 V and 0.383 V, respectively, at a current density of ~10 A/cm^2, yielding bandgap-voltage offsets of 0.20 and 0.21 V. We measured their broadband reflectance and used it to estimate thermophotovoltaic efficiency. The InP-based cell is estimated to yield 1.09 W/cm^2 at 1100 degrees C vs. 0.92 W/cm^2 for the GaAs-based cell, with efficiencies of 16.8 vs. 9.2%. The efficiencies of both devices are limited by sub-bandgap absorption, with power weighted sub-bandgap reflectances of 81% and 58%, respectively, which we assess largely occurs in the graded buffers. We estimate that the thermophotovoltaic efficiencies would peak at ~1100 degrees C at 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0-2.3 micron atmospheric window. We estimate peak LPC efficiencies of 36.8% and 32.5% under 2.0 micron irradiances of 1.86 W/cm^2 and 2.81 W/cm^2, respectively. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2310_08727 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion Schulte, Kevin L. Friedman, Daniel J. Dada, Titilope Guthrey, Harvey L. da Costa, Edgard Winter Tervo, Eric J. France, Ryan M. Geisz, John F. Steiner, Myles A. Applied Physics Materials Science We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and 8.9x10^6 cm^-2 on InP and GaAs, respectively. The devices generate open-circuit voltages of 0.386 V and 0.383 V, respectively, at a current density of ~10 A/cm^2, yielding bandgap-voltage offsets of 0.20 and 0.21 V. We measured their broadband reflectance and used it to estimate thermophotovoltaic efficiency. The InP-based cell is estimated to yield 1.09 W/cm^2 at 1100 degrees C vs. 0.92 W/cm^2 for the GaAs-based cell, with efficiencies of 16.8 vs. 9.2%. The efficiencies of both devices are limited by sub-bandgap absorption, with power weighted sub-bandgap reflectances of 81% and 58%, respectively, which we assess largely occurs in the graded buffers. We estimate that the thermophotovoltaic efficiencies would peak at ~1100 degrees C at 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0-2.3 micron atmospheric window. We estimate peak LPC efficiencies of 36.8% and 32.5% under 2.0 micron irradiances of 1.86 W/cm^2 and 2.81 W/cm^2, respectively. |
| title | Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2310.08727 |