Feshbach Resonances in Exciton-Charge-Carrier Scattering in Semiconductor Bilayers

Fuente: arXiv
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Main Authors: Wagner, Marcel, Ołdziejewski, Rafał, Rose, Félix, Köder, Verena, Kuhlenkamp, Clemens, İmamoğlu, Ataç, Schmidt, Richard
Format: Preprint
Published: 2023
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author Wagner, Marcel
Ołdziejewski, Rafał
Rose, Félix
Köder, Verena
Kuhlenkamp, Clemens
İmamoğlu, Ataç
Schmidt, Richard
author_facet Wagner, Marcel
Ołdziejewski, Rafał
Rose, Félix
Köder, Verena
Kuhlenkamp, Clemens
İmamoğlu, Ataç
Schmidt, Richard
contents Feshbach resonances play a vital role in the success of cold atoms investigating strongly-correlated physics. The recent observation of their solid-state analog in the scattering of holes and intralayer excitons in transition metal dichalcogenides [Schwartz et al., Science 374, 336 (2021)] holds compelling promise for bringing fully controllable interactions to the field of semiconductors. Here, we demonstrate how tunneling-induced layer hybridization can lead to the emergence of two distinct classes of Feshbach resonances in atomically thin semiconductors. Based on microscopic scattering theory we show that these two types of Feshbach resonances allow to tune interactions between electrons and both short-lived intralayer, as well as long-lived interlayer excitons. We predict the exciton-electron scattering phase shift from first principles and show that the exciton-electron coupling is fully tunable from strong to vanishing interactions. The tunability of interactions opens the avenue to explore Bose-Fermi mixtures in solid-state systems in regimes that were previously only accessible in cold atom experiments.
format Preprint
id arxiv_https___arxiv_org_abs_2310_08729
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Feshbach Resonances in Exciton-Charge-Carrier Scattering in Semiconductor Bilayers
Wagner, Marcel
Ołdziejewski, Rafał
Rose, Félix
Köder, Verena
Kuhlenkamp, Clemens
İmamoğlu, Ataç
Schmidt, Richard
Mesoscale and Nanoscale Physics
Quantum Gases
Strongly Correlated Electrons
Quantum Physics
Feshbach resonances play a vital role in the success of cold atoms investigating strongly-correlated physics. The recent observation of their solid-state analog in the scattering of holes and intralayer excitons in transition metal dichalcogenides [Schwartz et al., Science 374, 336 (2021)] holds compelling promise for bringing fully controllable interactions to the field of semiconductors. Here, we demonstrate how tunneling-induced layer hybridization can lead to the emergence of two distinct classes of Feshbach resonances in atomically thin semiconductors. Based on microscopic scattering theory we show that these two types of Feshbach resonances allow to tune interactions between electrons and both short-lived intralayer, as well as long-lived interlayer excitons. We predict the exciton-electron scattering phase shift from first principles and show that the exciton-electron coupling is fully tunable from strong to vanishing interactions. The tunability of interactions opens the avenue to explore Bose-Fermi mixtures in solid-state systems in regimes that were previously only accessible in cold atom experiments.
title Feshbach Resonances in Exciton-Charge-Carrier Scattering in Semiconductor Bilayers
topic Mesoscale and Nanoscale Physics
Quantum Gases
Strongly Correlated Electrons
Quantum Physics
url https://arxiv.org/abs/2310.08729