Controlling Umklapp scattering in bilayer graphene moir'e superlattice
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2023
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| _version_ | 1866917590612312064 |
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| author | Jat, Mohit Kumar Mishra, Shubhankar Mann, Harsimran Kaur Bajaj, Robin Watanabe, Kenji Taniguchi, Takashi Krishnamurthy, H. R. Jain, Manish Bid, Aveek |
| author_facet | Jat, Mohit Kumar Mishra, Shubhankar Mann, Harsimran Kaur Bajaj, Robin Watanabe, Kenji Taniguchi, Takashi Krishnamurthy, H. R. Jain, Manish Bid, Aveek |
| contents | In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from electron-electron Umklapp (Uee) scattering, making the resistance of graphene/hBN moir'e devices significantly larger than that of non-aligned devices (where Uee is forbidden). We quantify the strength of the Uee scattering and find that it follows a universal scaling with Fermi energy and has a non-monotonic dependence on the charge carrier density. The Uee scattering is strongly electric field tunable and affected by layer-polarization of BLG. It has a strong particle-hole asymmetry - the resistance when the chemical potential is in the conduction band is significantly lesser than when it is in the valence band, making the electron-doped regime more practical for potential applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_08906 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Controlling Umklapp scattering in bilayer graphene moir'e superlattice Jat, Mohit Kumar Mishra, Shubhankar Mann, Harsimran Kaur Bajaj, Robin Watanabe, Kenji Taniguchi, Takashi Krishnamurthy, H. R. Jain, Manish Bid, Aveek Mesoscale and Nanoscale Physics Materials Science In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from electron-electron Umklapp (Uee) scattering, making the resistance of graphene/hBN moir'e devices significantly larger than that of non-aligned devices (where Uee is forbidden). We quantify the strength of the Uee scattering and find that it follows a universal scaling with Fermi energy and has a non-monotonic dependence on the charge carrier density. The Uee scattering is strongly electric field tunable and affected by layer-polarization of BLG. It has a strong particle-hole asymmetry - the resistance when the chemical potential is in the conduction band is significantly lesser than when it is in the valence band, making the electron-doped regime more practical for potential applications. |
| title | Controlling Umklapp scattering in bilayer graphene moir'e superlattice |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2310.08906 |