The Physical Meaning of Time-Delayed Collection Field Transients from Disordered Devices
Fuente:
arXiv
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Preprint |
| Published: |
2023
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866908424232501248 |
|---|---|
| author | Hußner, Markus Deibel, Carsten MacKenzie, Roderick Charles Ian |
| author_facet | Hußner, Markus Deibel, Carsten MacKenzie, Roderick Charles Ian |
| contents | Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge carrier density and device geometry is essential for developing the next generation of devices. The Time-Delayed-Collection-Field technique (TDCF) is becoming a widely used method to measure both recombination and carrier transport with values derived from this method being widely reported for many material systems. However, most novel materials are highly disordered with a high density of trap states and standard TDCF-theory neglects the influence of these states. In this work we examine how reliable TDCF can be as a measurement technique when the device contains significant energetic disorder. We identify regimes where the results can be relied upon and where the results should be taken with more caution. Finally, we provide simple and easy to use experimental tests to help the experimentalist decide if the physical processes are dominated by trap states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_09001 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | The Physical Meaning of Time-Delayed Collection Field Transients from Disordered Devices Hußner, Markus Deibel, Carsten MacKenzie, Roderick Charles Ian Applied Physics Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge carrier density and device geometry is essential for developing the next generation of devices. The Time-Delayed-Collection-Field technique (TDCF) is becoming a widely used method to measure both recombination and carrier transport with values derived from this method being widely reported for many material systems. However, most novel materials are highly disordered with a high density of trap states and standard TDCF-theory neglects the influence of these states. In this work we examine how reliable TDCF can be as a measurement technique when the device contains significant energetic disorder. We identify regimes where the results can be relied upon and where the results should be taken with more caution. Finally, we provide simple and easy to use experimental tests to help the experimentalist decide if the physical processes are dominated by trap states. |
| title | The Physical Meaning of Time-Delayed Collection Field Transients from Disordered Devices |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2310.09001 |