Moiré excitons in biased twisted bilayer graphene under pressure

Fuente: arXiv
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Autores principales: Duarte, V. G. M., da Costa, D. R., Peres, N. M. R., Teles, L. K., Chaves, A. J.
Formato: Preprint
Publicado: 2023
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author Duarte, V. G. M.
da Costa, D. R.
Peres, N. M. R.
Teles, L. K.
Chaves, A. J.
author_facet Duarte, V. G. M.
da Costa, D. R.
Peres, N. M. R.
Teles, L. K.
Chaves, A. J.
contents Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the bandgap due to the electron-electron interaction, with a renormalization of the bandgap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers.
format Preprint
id arxiv_https___arxiv_org_abs_2310_09645
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Moiré excitons in biased twisted bilayer graphene under pressure
Duarte, V. G. M.
da Costa, D. R.
Peres, N. M. R.
Teles, L. K.
Chaves, A. J.
Mesoscale and Nanoscale Physics
Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the bandgap due to the electron-electron interaction, with a renormalization of the bandgap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers.
title Moiré excitons in biased twisted bilayer graphene under pressure
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2310.09645