Calculating the Coulomb blockade phase diagram in the strong coupling regime of single-electron transistor: a quantum Monte Carlo study

Fuente: arXiv
Enregistré dans:
Détails bibliographiques
Auteurs principaux: Harata, Pipat, Hongthong, Wipada, Srivilai, Prathan
Format: Preprint
Publié: 2023
Sujets:
Accès en ligne:
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
_version_ 1866929230577664000
author Harata, Pipat
Hongthong, Wipada
Srivilai, Prathan
author_facet Harata, Pipat
Hongthong, Wipada
Srivilai, Prathan
contents We present a novel approach for calculating the Coulomb Blockade Phase Diagram (CBPD) in the experimentally accessible strong coupling regime of a single-electron transistor (SET). Our method utilizes the Path Integral Monte Carlo (PIMC) technique to accurately compute the Coulomb oscillation of the Differential Capacitance (DC). Furthermore, we investigate the impact of the gate voltage and temperature variations on the DC, thereby gaining insights into the system's behaviour. As a result, we propose a method to calculate the Coulomb Blockade Boundary Line (CBBL) and demonstrate its efficacy by setting the visibility parameter to $10\%$. The resulting boundary line effectively defines the transition between the Coulomb and non-Coulomb blockade regimes, thereby enabling the construction of a comprehensive CBPD.
format Preprint
id arxiv_https___arxiv_org_abs_2310_11128
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Calculating the Coulomb blockade phase diagram in the strong coupling regime of single-electron transistor: a quantum Monte Carlo study
Harata, Pipat
Hongthong, Wipada
Srivilai, Prathan
Mesoscale and Nanoscale Physics
We present a novel approach for calculating the Coulomb Blockade Phase Diagram (CBPD) in the experimentally accessible strong coupling regime of a single-electron transistor (SET). Our method utilizes the Path Integral Monte Carlo (PIMC) technique to accurately compute the Coulomb oscillation of the Differential Capacitance (DC). Furthermore, we investigate the impact of the gate voltage and temperature variations on the DC, thereby gaining insights into the system's behaviour. As a result, we propose a method to calculate the Coulomb Blockade Boundary Line (CBBL) and demonstrate its efficacy by setting the visibility parameter to $10\%$. The resulting boundary line effectively defines the transition between the Coulomb and non-Coulomb blockade regimes, thereby enabling the construction of a comprehensive CBPD.
title Calculating the Coulomb blockade phase diagram in the strong coupling regime of single-electron transistor: a quantum Monte Carlo study
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2310.11128