Coulomb contribution to Shockley-Read-Hall (SRH) recombination
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866916949315813376 |
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| author | Sakowski, Konrad Strak, Pawel Kempisty, Pawel Piechota, Jacek Grzegory, Izabella Perlin, Piotr Monroy, Eva Kaminska, Agata Krukowski, Stanislaw |
| author_facet | Sakowski, Konrad Strak, Pawel Kempisty, Pawel Piechota, Jacek Grzegory, Izabella Perlin, Piotr Monroy, Eva Kaminska, Agata Krukowski, Stanislaw |
| contents | Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_11823 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Coulomb contribution to Shockley-Read-Hall (SRH) recombination Sakowski, Konrad Strak, Pawel Kempisty, Pawel Piechota, Jacek Grzegory, Izabella Perlin, Piotr Monroy, Eva Kaminska, Agata Krukowski, Stanislaw Materials Science Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase. |
| title | Coulomb contribution to Shockley-Read-Hall (SRH) recombination |
| topic | Materials Science |
| url | https://arxiv.org/abs/2310.11823 |