Fast optoelectronic charge state conversion of silicon vacancies in diamond

Documenti analoghi

• Second-order Stark shifts exceeding 10$\,$GHz in electrically contacted SiV$^-$ centers in diamond
  di: Rieger, Manuel, et al.
  Pubblicazione: (2025)
• Mitigating the Transition of SiV$^-$ in Diamond to an Optically Dark State
  di: Rieger, Manuel, et al.
  Pubblicazione: (2025)
• Nitrogen vacancy center in diamond-based Faraday magnetometer
  di: Kashtiban, Reza, et al.
  Pubblicazione: (2024)
• Photoionization current spectroscopy of individual silicon vacancies in silicon carbide
  di: Okajima, Kazuki, et al.
  Pubblicazione: (2025)
• Red-shift effect on the zero field splitting for negatively charged nitrogen-vacancy centers in diamond
  di: Zheng, Wang, et al.
  Pubblicazione: (2023)